PARAMETER TEST CONDITIONS SYMBOL BYG20D BYG20G BYG20J UNIT Maximum instantaneous forward voltage IF = 1 A TJ = 25 ° C VF ( 1) 1. 4 Maximum DC reverse current VR = VRRM TJ = 25 ° C IR 1 µA TJ = 100 ° C 10 Maximum reverse recovery time IF = 0. 25 A trr 75 ns THERMAL CHARACTERISTICS ( TA = 25 ° C unless. PARAMETER SYMBOL BYG20D BYG20G BYG20J UNIT Device marking code BYG20D BYG20G BYG20J Maximum repetitive peak reverse voltage VRRMV Average forward current IF( AV) 1. 5 A Peak forward surge current 10 ms single half sine- wa ve superimposed on rated load IFSM 30 A Pulse energy in avalanche mode, non repetitive ( inductive load switch off). BYG20G- E3/ TR Vishay General Semiconductor Rectifiers 1. Volt datasheet, inventory, & pricing. BYG20G datasheet, BYG20G pdf, BYG20G data sheet, datasheet, data sheet, pdf, Taiwan Semiconductor, Discrete Devices - Diode- High Efficienct Recovery. PARAMETER SYMBOL BYG20D BYG20G BYG20J UNIT Marking code on the device BYG20D BYG20G BYG20J Repetitive peak reverse voltage V RRMV Reverse voltage, total rms value V R( RMSV Forward current I F 1. 5 A Peak forward surge current, 8. 3ms single half sine- wave superimposed on rated load I FSM 30 A. Fast Silicon Mesa SMD Rectifier, BYG20G datasheet, BYG20G circuit, BYG20G data sheet : VISHAY, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. BYG20G Datasheet Fast Silicon Mesa SMD Rectifier - Vishay Siliconix 1.
5A, 200V - 600V High Efficient Surface Mount Rectifiers, Taiwan Semiconductor Company, Ltd BYG20G- E3TR